FORMATION OF METAL SILICIDES FILM COVERINGS BY METHODS OF LOCAL LASER TRANSFER AND ANNEALING

V. P. Veiko, V. . Kasatkin, V. . Matyzhonok, A. A. Petrov, E. . Shakhno


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Abstract

Films of metal silicides, being low-energy-gap semiconductors, represent rather perspective material for creation of termogauges. The possibility of film coverings reception from silicides of chrome and iron by methods of local laser transfer and laser annealing is investigated in the paper. Film coverings of metal silicides on various substrates are received and their electric parameters are investigated. Dependence of film coverings properties on their drawing conditions is defined.


Keywords: local laser transfer, laser annealing, film, metal silicide, substrate layer.
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