HIGH-VOLTAGE MODULATOR CONSTRUCTION WITH NANOSECOND FRONT FOR THE ELECTRO-OPTICAL SHUTTER MANAGEMENT AS A PART OF THE SOLID-STATE LASER

V. . Togatov, D. . Ternovsky


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Abstract

The mode of ultra fast switch-on of the MOSFET at which the device switching time does not exceed nanoseconds is considered. The explanation of the ultra fast switching mechanism is offered. Results of the experiments confirming the ultra fast switching mechanism are presented. Construction possibility of the high-voltage modulator with nanosecond front on the basis of ultra fast switching effect of the MOSFET is considered. Block diagram and characteristics of the developed high-voltage pulse modulator for electro optical shutters management with an impulse amplitude of 6 kV and front time up to 5ns are presented.


Keywords: the high-voltage techniques, the pulse techniques, techniques of a nanosecond range, electro optical shutter
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