EFFECT OF LASER MICRO STRUCTURING PROCESS ON ELECTROPHYSICAL PROPERTIES OF SIO2/SI SYSTEM

A. M. Skvortsov, R. . Khalestkiy, . Huynh Cong Tu


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Abstract

Electrophysical parameters of SiO2/Si system after irradiation by pulsed ytterbium fiber laser of ILI-1-50 type have been investigated. It is shown that in the silicon-silicon dioxide system under laser radiation a formation of defects occurs responsible for the appearance of different kinds of charges. It is found that laser-induced defects appear at sites remote from the irradiation zone as well. The defect generation rate at the silicon-silicon dioxide interface depends on their position in the energy band gap of silicon and reaches a maximum near the Fermi level.


Keywords: laser irradiations, dislocation, slip lines, micro structuring, capacitance-voltage characteristics
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