EFFECT OF LASER MICRO STRUCTURING PROCESS ON ELECTROPHYSICAL PROPERTIES OF SIO2/SI SYSTEM

Skvortsov Albert Matveevich, Roman Khalestkiy, Huynh Cong Tu

2013 , VOLUME 13, NUMBER 1 ( January-February )

ISSN 2226-1494 (print), ISSN 2500-0373 (online)

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Nikiforov
Vladimir O.
D.Sc., Prof.

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EFFECT OF LASER MICRO STRUCTURING PROCESS ON ELECTROPHYSICAL PROPERTIES OF SIO2/SI SYSTEM

A. M. Skvortsov, R. Khalestkiy, Huynh Cong Tu

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Abstract

Electrophysical parameters of SiO2/Si system after irradiation by pulsed ytterbium fiber laser of ILI-1-50 type have been investigated. It is shown that in the silicon-silicon dioxide system under laser radiation a formation of defects occurs responsible for the appearance of different kinds of charges. It is found that laser-induced defects appear at sites remote from the irradiation zone as well. The defect generation rate at the silicon-silicon dioxide interface depends on their position in the energy band gap of silicon and reaches a maximum near the Fermi level.

Keywords: laser irradiations, dislocation, slip lines, micro structuring, capacitance-voltage characteristics

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