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	Measurements of heat capacity and thermal conductivity of β-Ga2O3 and β-(AlxGa1–x)2O3 bulk crystals grown by the Czochralski method</div>

Dmitrii A. Bauman, Panov Dmitry  Yu., Vladislav A. Spiridonov, Kremleva Arina  V. , Odnoblyudov Maxim  A. , Aleksei V. Asach, Vasiliy A. Krylov, Grigory N. Isachenko, Ekaterina V.Tambulatova , Bougrov Vladislav E., Romanov Alexey E

2021 , VOLUME 21, NUMBER 6 ( november-december )

ISSN 2226-1494 (print), ISSN 2500-0373 (online)

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Nikiforov
Vladimir O.
D.Sc., Prof.

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doi: 10.17586/2226-1494-2021-21-6-880-886

Measurements of heat capacity and thermal conductivity of β-Ga₂O₃ and β-(Al_xGa_1–x)₂O₃ bulk crystals grown by the Czochralski method

D. A. Bauman, D. Y. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, A. V. Asach, V. A. Krylov, G. N. Isachenko, E. V. Tambulatova, V. E. Bougrov, A. E. Romanov

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Bauman D.A., Panov D.Yu., Spiridonov V.A., Kremleva A.V., Odnoblyudov M.A., Asach A.V., Krylov V.A., Isachenko G.N., Tambulatova E.V., Bougrov V.E., Romanov A.E. Measurements of heat capacity and thermal conductivity of β-Ga₂O₃ and β-(AlxGa_1–_x)₂O₃ bulk crystals grown by the Czochralski method. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2021, vol. 21, no. 6, pp. 880–886 (in Russian). doi: 10.17586/2226-1494-2021-21-6-880-886

Abstract

One of the application fields of bulk gallium oxide crystals is the manufacture of substrates for epitaxial growth of device structures for power electronics and optoelectronics in the Ga₂O₃/(Al_xGa_1–x)₂O₃ system. For most instrument designs, the substrate serves as a channel for heat removal from the device to an external heat sink. This property stresses the importance of information about the thermal characteristics of bulk crystals of gallium oxide and a solid solution of gallium and aluminum oxide, particularly about the heat capacity and thermal conductivity. In this work, we measured the heat capacity of bulk crystals of the β-modification of pure gallium oxide (β-Ga₂O₃) obtained by the Czochralski method, as well as of a double solid solution of gallium and alumina oxide β-(Al_xGa_1–x)₂O₃ in the range of temperatures from 25 °C to 480 °C and for various values of the Al concentration. Samples of bulk crystals were grown in an industrial installation “Nika-3” by pulling from the melt (Czochralski method). Further, the specific heat was measured on samples specially prepared from bulk crystals by differential scanning calorimetry. The thermal conductivity in the [010] crystallographic direction was measured by the method using a flat heat source (hot disk method). The dependence of the specific heat capacity of β-(Al_xGa_1–x)₂O₃ crystals on Al concentration was obtained for the atomic concentration of aluminum ranging from 0 (pure gallium oxide) to 9.11 at.%. The influence of the Al content on the heat capacity of the material is analyzed. The temperature dependence of the thermal conductivity of β-Ga₂O₃ in the [010] direction (direction of growth) in the temperature range from 43 °С to 120 °С was also obtained. The results of the study can be used to investigate the thermal properties of gallium oxide, as well as to solve the problem of heat removal for electronic devices based on gallium oxide.

Keywords: gallium oxide, bulk crystals, Czochralski method, heat capacity, thermal conductivity

Acknowledgements. This work was supported by the Russian Science Foundation, Project No. 19-19-00686.

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