PULSED FIBER LASER APPLICATION FOR SIO2/SI SYSTEM MICROSTRUCTURING
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The effect of SiO2/Si system irradiation by pulsed ytterbium fiber laser PLI-1-50 on the morphology and system structural properties has been investigated. It is shown that during surface irradiation of the monocrystalline silicon wafer covered by a thin layer of thermally grown silicon dioxide (SiO2), there are significant structural changes associated with localization of the silicon strips of slip-lines and grid of slip-lines on the surface formed by the intersection of these strips. Phonon theory of the resulting microstructural topography has been considered.