GALVANIC MAGNETIC PROPERTIES OF BISMUTH THIN FILMS DOPED WITH TELLURIUM MADE BY THERMAL VACUUM EVAPORATION

V. A. Komarov, D. Y. Matveev, E. V. Demidov, A. N. Krushelnitskiy


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Abstract

The influence of n-type impurity of tellurium (concentration range from 0.005 atomic % Te to 0.15 atomic % Te) on galvanic magnetic properties (resistivity, magnetic resistance and Hall constant) of Bi thin films with various thicknesses was studied. The properties were measured in temperature range from 77 to 300 K. It was established that the classical size effect in the films is significant and decreases with higher concentration of Te impurity. The analysis of experimental results was carried out in approximation of the law of Jones-Schoenberg dispersion for Bi films doped with tellurium. Calculation of concentration and mobility of charge carriers in the studied films was made.


Keywords: bismuth, n-type doping, thin films, resistivity, magnetic resistance, Hall constant, the size effect
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