POROUS SILICON THIN FILM EFFECT ON SPECTRAL CHARACTERISTIC OF SILICON PHOTODIODE

Vladimir Sokolov, Huynh Cong Tu

2011 , VOLUME 11, NUMBER 4 ( JULY-AUGUST )

ISSN 2226-1494 (print), ISSN 2500-0373 (online)

Publications

Editor-in-Chief

Nikiforov
Vladimir O.
D.Sc., Prof.

Partners

POROUS SILICON THIN FILM EFFECT ON SPECTRAL CHARACTERISTIC OF SILICON PHOTODIODE

V. Sokolov, Huynh Cong Tu

Read the full article

Abstract

Effect of porous silicon thin film formed by anode electrochemical etching of p-type area on spectral characteristic of silicon photodiode has been examined. It is shown that generated porous silicon layer results in significant increase of spectral sensitivity in the whole spectrum. Time modification of photodiode spectral sensitivity has been observed.

Keywords: porous silicon, spectral characteristic, photodiode.

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License