MOSFET, high-voltage techniques, pulse techniques, nanoseconds techniques, electro-optical
shutter.
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THE THEORY OF THEMOSFET ULTRA FAST SWITCHING

V. . Togatov, P. . Gnatyuk, D. . Ternovsky


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Abstract

 

Ultra fast switching process of the high-voltage MOSFET is reported, a switching time constant being less than
several nanoseconds. The ultra fast switching mechanism is explained and interpreted in the framework of the
given mathematical model. The results of direct experiments confirm the proposed ultra fast switching
mechanism interpretation.

Keywords:   MOSFET, high-voltage techniques, pulse techniques, nanoseconds techniques, electro-optical shutter.
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