THE INFLUENCE OF YLP - LASER RADIATION ON THE CURRENT-VOLTAGE CHARACTERISTICS OF THE SILICON-SILICON DIOXIDE SYSTEM

R. . Khalestkiy, Q. T. Pham


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Abstract

 

The paper presents the results of the experiment concerning irradiation of thermally oxidized silicon wafer by pulsed fiber YLP-laser with 1.06 microns wavelength and different power density. It is shown that defects appear in the SiO2 film under laser irradiation responsible for the increase of a negative charge in the dielectric and the conductivity of SiO2 for certain values of the shutter bias voltage.

Keywords: structure defect, laser irradiation, negative charge, conductivity of silicon dioxide
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