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	Peculiarities of growing Ga<sub>1–x</sub>In<sub>x</sub>As solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone</div>

Devitsky Oleg V. , Lunin Leonid S., Mitrofanov Daniil V., Sysoev Igor A. , Nikulin Dmitry A. , Chapura Oleg M.

2023 , VOLUME 23, NUMBER 4 ( july-august )

ISSN 2226-1494 (print), ISSN 2500-0373 (online)

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Nikiforov
Vladimir O.
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doi: 10.17586/2226-1494-2023-23-4-703-710

Peculiarities of growing Ga_1–xIn_xAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone

O. V. Devitsky, L. S. Lunin, D. V. Mitrofanov, I. A. Sysoev, D. A. Nikulin, O. M. Chapura

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Devitsky O.V., Lunin L.S., Mitrofanov D.V., Sysoev I.A., Nikulin D.A., Chapura O.M. Peculiarities of growing Ga_1–xIn_xAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2023, vol. 23, no. 4, pp. 703–710 (in Russian). doi: 10.17586/2226-1494-2023-23-4-703-710

Abstract

Solid solution Ga_1–xIn_xAs is widely used in modern optoelectronics as a material for p-i-n photodetectors, lasers emitting in the spectral range 1.3–1.55 μm. In this paper, the features of obtaining Ga_1–xIn_xAs films by the method of zone recrystallization with a temperature gradient, the essence of which is the sequential recrystallization of parts of the source melt moving under the action of a temperature gradient, are studied. Ga_1–xIn_xAs films on GaAs substrates were obtained in a temperature gradient field through a thin gas zone in a specially designed graphite cassette. The films were prepared at a temperature of 1123 K with a temperature gradient of 30 K/cm. A 1:1 mixture of nitrogen and hydrogen was used as the carrier gas. The thickness of the gas zone between the source and the substrate was 1 mm. The deposition time for all films was 10 min. The growth kinetics, morphology, and structure of the chemical bonds of the obtained films have been studied. Based on the results of theoretical calculations, it was found that an increase in the concentration of indium leads to a decrease in the film growth rate to 0.3137 µm/min. A comparison of the results of theoretical calculations with experimental results showed a discrepancy between the growth rates for films with an indium concentration in the growth source of more than 20 %, which is primarily due to the segregation of indium on the film surface. The films have an RMS roughness from 9.1 to 24.2 nm. It is shown that the content of indium in the growth source significantly affects the properties of the grown films and leads to a decrease in the growth rate, an increase in the elastic stresses in the layer, and a nonstoichiometric composition of the film. It has been established that with an increase in the indium concentration in the film, a significant shift in the frequency of the LO and TO phonon modes of GaAs to the left by 13 and 16 cm^–1, respectively, is observed due to the influence of elastic mechanical stresses. The presented results show that Ga_1–xIn_xAs solid solution films with short-range order of chemical bonds were obtained by the method of zone recrystallization in a temperature gradient.

Keywords: temperature gradient field, thin gas band, III–V compounds, Ga1–xInxAs, Raman spectroscopy, atomic force microscopy

Acknowledgements. The work was carried out within the framework of the State Assignment no. 122020100254-3 (study of the surface morphology of films) and no. 122020100326-7 (Raman studies and determination of the chemical composition) of the SSC RAS as well as using the resources of the Center for Collective Use of the North Caucasus Federal University and with financial support of the Ministry of Education and Science of the Russian Federation, unique identifier of the project RF-2296.61321X0029 (agreement no. 075-15-2021-687) (obtaining experimental film samples). The authors express their gratitude to the North Caucasus Federal University for their help in the framework of the competition to support projects of scientific groups and individual scientists.

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Peculiarities of growing Ga1–xInxAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone

Peculiarities of growing Ga_1–xIn_xAs solid solutions on GaAs substrates in the field of a temperature gradient through a thin gas zone