DOI: 10.17586/2226-1494-2015-15-1-60-64


INVESTIGATION OF HETEROSTRUCTURES 3C-SIC/15R-SIC

S. P. Lebedev, A. A. Lebedev, I. P. Nikitina, V. A. Shkoldin, D. B. Shustov


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For citation: Lebedev A.A., Lebedev S.P., Nikitina I.P., Shkoldin V.A., Shustov D.B. Investigation of heterostructures 3C-SiC/15RSiC. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2015, vol. 15, no. 1, pp. 60–64 (in Russian)

Abstract

The subject of study. Investigation results for 3C-SiC layers, obtained on single-crystal 15R-SiC substrates by sublimation epitaxy in vacuum are presented.

Materials and methods. 15R polytype Lely crystals were used as a substrate; the growth was carried out on polar С (000 )1 and Si (0001) substrate faces. The growth temperature was 1950-2000 °C, and growth time was equal to 10 min. Commercial silicon carbide powder with a grain diameter equal to 10-20 µm was used as a growth source. The following methods were applied for the characterization of grown epitaxial layers: cathodoluminescence, optical microscopy and two-crystal X-ray diffraction.

Main results. The possibility of obtaining epitaxial 3C-SiC on 15R-SiC substrate by sublimation epitaxy in vacuum was demonstrated. It is shown that, C-face is preferable for heteropolytype growth, since more uniform growth of cubic polytype is observed on it with a small percentage of spurious substrate polytype inclusions; the same situation appears in the case of 6H-SiC substrate application.

Practical significance. Comparison of the results of heteropolytype growth for 3C-SiC on substrates of other polytypes (6HSiC, 15R-SiC, 4H-SiC) will give the possibility to understand more completely the transformation mechanism of the crystal lattice during epitaxial growth and to develop a theoretical model of the process.


Keywords: silicon carbide, sublimation epitaxy, cathodoluminescence, X-ray diffractometry

Acknowledgements. Работа частично выполнена при государственной финансовой поддержке ведущих университетов Российской Федерации (субсидия 074-U01) и гранта РФФИ 14-02-00552.

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