AVALANCHE BREAKDOWN OF p-n-JUNCTION IN RADIOTECHNICS
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For citation: Shashkina A.S., Krivosheikin A.V., Skvortsov N.N., Vorotkov M.V. Avalanche breakdown of p-n-junction in radiotechnics. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2016, vol. 16, no. 5, pp. 864–871. doi: 10.17586/2226-1494-2016-16-5-864-871
The paper presents research results of fractal properties of microplasma noise at LED avalanche breakdown in the visible spectrum (λ= 660; 700 nm). The breakdown type of p-n-junctionwas determined as a result of measured current-voltage characteristics at room temperature, at the temperature of 100-105 °C and after cooling down to room temperature. It was shown that the breakdown of avalanche type is realized in the majority of LEDs. It was established that the partial avalanche breakdown mode may be realized in LEDs, when a small current flows in pulses through the device. By increasing the voltage, pulse amplitude increases, closely spaced pulses merge, and time intervals between them are reduced. To interpret experimental results we applied model of processes occurring in microplasma, and noise model of partial and advanced avalanche breakdown (by A.S. Tager). The study revealed previously non-described features of microplasma noise – the fractal nature of microplasma noise. The algorithm for fractal dimension calculating was implemented in MATLAB. The dependence of fractal dimension on the reverse voltage applied to the LEDs was found out. Obtained fractal signal can be applied in optical communication systems for noise free and confidential information transmission.
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