Menu
Publications
2024
2023
2022
2021
2020
2019
2018
2017
2016
2015
2014
2013
2012
2011
2010
2009
2008
2007
2006
2005
2004
2003
2002
2001
Editor-in-Chief
Nikiforov
Vladimir O.
D.Sc., Prof.
Partners
doi: 10.17586/2226-1494-2021-21-5-686-693
Abnormal diffusion profile of adatoms on extremely wide terraces of the Si(111) surface
Read the full article ';
Article in Russian
For citation:
Abstract
For citation:
Soloveva E.O., Rogilo D.I., Sheglov D.V., Latyshev A.V. Abnormal diffusion profile of adatoms on extremely wide terraces of the Si(111) surface. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2021, vol. 21, no. 5, pp. 686–693 (in Russian). doi: 10.17586/2226-1494-2021-21-5-686-693
Abstract
The authors experimentally studied the distribution of the adatom concentration on extremely wide terraces of the Si(111) surface whose dimensions are comparable with the diffusion length of adatoms. The extremely wide terraces were created during in situ experiments carried out by ultrahigh vacuum reflection electron microscopy by high-temperature annealing of Si(111) samples (more than 1000 °C) followed by rapid cooling to 750 °C to form 7 × 7 superstructure domains. A detailed analysis of the surface morphology of the terraces was carried out by ex situ atomic force microscopy under ambient conditions. Based on high-resolution (1.2 nm/pixel) atomic force microscopy images, panoramic topographic images of the terraces were formed. Digital processing of the panoramic images visualized the distribution of the adatom concentration n. For a terrace cooled from 1070 °C, central terrace regions show minimum n values around 0.13 BL (1 bilayer (BL) = 1.56×1015 cm−2); close to the monatomic step bordering the terrace, n increases to about 0.14 BL. The authors determined that this radial distribution n(r) at 1070 °C corresponds to the adatom diffusion coefficient D = 59 ± 12 μm2/s. It was found that, for a terrace cooled from 1090 °C, the approach assuming the same adatom diffusion length over the entire terrace does not describe the experimental n(r) distribution. For its analysis, the authors used the solution of the stationary diffusion equation under the assumption that D is not constant. Based on a numerical solution, the dependence of D on the experimentally measured n values was obtained. Under the assumption that adatom lifetime does not depend on n at 1090 °C, the adatom diffusion coefficient was found to decrease from 140 μm2/s at n = 0.093 BL (in the central terrace regions) to 5 μm2/s at n = 0.118 BL (near the step). The results of this work experimentally demonstrated that the control over adatom concentration can be used to significantly vary the diffusion properties of the adsorption layer on the crystal surface.
Keywords: silicon, surface diffusion, adatom, atomic force microscopy, concentration distribution
Acknowledgements. This work was supported by the Ministry of Science and Higher Education of the Russian Federation (grant No. 075-15-2020-797).
References
Acknowledgements. This work was supported by the Ministry of Science and Higher Education of the Russian Federation (grant No. 075-15-2020-797).
References
1. Misbah C., Pierre-Louis O., Saito Y. Crystal surfaces in and out of equilibrium: A modern view. Reviews of Modern Physics, 2010, vol. 82, no. 1, pp. 981–1040. https://doi.org/10.1103/RevModPhys.82.981
2. Evans J.W., Thiel P.A., Bartelt M.C. Morphological evolution during epitaxial thin film growth: Formation of 2D islands and 3D mounds. Surface Science Reports, 2006, vol. 61, no. 1-2, pp. 1–128. https://doi.org/10.1016/j.surfrep.2005.08.004
3. Latyshev A.V., Aseev A.L. Monatomic Steps on Silicon Surfaces. Novosibirsk, Siberian Branch of the Russian Academy of Sciences Publ., 2006, 241 p. (in Russian)
4. Rogilo D.I., Fedina L.I., Kosolobov S.S., Ranguelov B.S., Latyshev A.V. Critical terrace width for two-dimensional nucleation during Si growth on Si(111)-(7×7) surface. Physical Review Letters, 2013, vol. 111, no. 3, pp. 036105. https://doi.org/10.1103/PhysRevLett.111.036105
5. Takayanagi K., Tanishiro Y., Takahashi S., Takahashi M. Structure analysis of Si(111)-7×7 reconstructed surface by transmission electron diffraction. Surface Science, 1985, vol. 164, no. 2-3, pp. 367–392. https://doi.org/10.1016/0039-6028(85)90753-8
6. Lander J.J., Morrison J. Structures of clean surfaces of germanium and silicon. I. Journal of Applied Physics, 1963, vol. 34, no. 5, pp. 1403–1410. https://doi.org/10.1063/1.1729590
7. Yang Y.-N., Williams E.D. High atom density in the “1×1” phase and origin of the metastable reconstructions on Si(111). Physical Review Letters, 1994, vol. 72, no. 12, pp. 1862–1865. https://doi.org/10.1103/PhysRevLett.72.1862
8. Ong W.J., Tok E.S. Real time dynamics of Si magic clusters mediating phase transformation: Si(111)-(1×1) to (7×7) reconstruction revisited. Surface Science, 2012, vol. 606, no. 13-14, pp. 1037–1044. https://doi.org/10.1016/j.susc.2012.02.025
9. Nasimov D.A., Sheglov D.V., Rodyakina E.E., Kosolobov S.S., Fedina L.I., Teys S.A., Latyshev A.V. AFM and STM studies of quenched Si(111) surface. Physics of Low-Dimensional Structures, 2003, vol. 3-4, pp. 157–166.
10. Harrison W.A. Surface reconstruction on semiconductors. Surface Science, 1976, vol. 55, no. 1, pp. 1–19. https://doi.org/10.1016/0039-6028(76)90372-1
11. Pang A.B., Man K.L., Altman M.S., Stasevich T.J., Szalma F., Einstein T.L. Step line tension and step morphological evolution on the Si(111)(1×1) surface. Physical Review B, 2008, vol. 77, no. 11, pp. 115424. https://doi.org/10.1103/PhysRevB.77.115424
12. Rogilo D.I., Rybin N.E., Fedina L.I., Latyshev A.V. Adatom concentration distribution on an extrawide Si(111) terrace during sublimation. Optoelectronics, Instrumentation and Data Processing, 2016, vol. 52, no. 5, pp. 501–507. https://doi.org/10.3103/S8756699016050125
13. Sitnikov S., Kosolobov S., Latyshev A. Attachment–detachment limited kinetics on ultra-flat Si(111) surface under etching with molecular oxygen at elevated temperatures. Surface Science, 2015, vol. 633, pp. L1–L5. https://doi.org/10.1016/j.susc.2014.12.004
14. Fick A. On liquid diffusion. Journal of Membrane Science, 1995, vol. 100, no. 1, pp. 33–38. https://doi.org/10.1016/0376-7388(94)00230-V
15. Meade R.D., Vanderbilt D. Adatoms on Si(111) and Ge(111) surfaces. Physical Review B, 1989, vol. 40, no. 6, pp. 3905–3913. https://doi.org/10.1103/physrevb.40.3905