<div>
	Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties</div>

Rodion R. Reznik, Konstantin P. Kotlyar, Igor V. Shtrom , Yuriy B. Samsonenko, Artem I. Khrebtov, George E. Cirlin

2021 , VOLUME 21, NUMBER 6 ( november-december )

ISSN 2226-1494 (print), ISSN 2500-0373 (online)

Publications

Editor-in-Chief

Nikiforov
Vladimir O.
D.Sc., Prof.

Partners

doi: 10.17586/2226-1494-2021-21-6-866-871

Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties

R. R. Reznik, K. P. Kotlyar, I. V. Shtrom, Y. B. Samsonenko, A. I. Khrebtov, G. E. Cirlin

Read the full article

Article in English

For citation:

Reznik R.R., Kotlyar K.P., Shtrom I.V., Samsonenko Yu.B., Khrebtov A.I., Cirlin G.E. Different III-V semiconductor nanowires with quantum dots on silicon: growth by molecular-beam epitaxy and properties. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2021, vol. 21, no. 6, pp. 866–871. doi: 10.17586/2226-1494-2021-21-6-866-871

Abstract

Recently, III-V semiconductor nanostructures of reduced dimension attract more and more interest of researchers for the new generation devices creation. Combinations of nanostructures with different dimensions are of special interest, among them, for example, quantum dots in the body of nanowires. Such quantum dotsʼ size and location control is strictly determined by the growth parameters. As a result of effective relaxation of mechanical stresses on the lateral faces of nanowires, the integration of hybrid nanostructures with silicon technology is possible. In this work, we have demonstrated the possibility of GaP nanowires with GaAs quantum dots and AlGaP nanowires with InGaP quantum dots growth on silicon by molecular-beam epitaxy. The physical properties of the selected nanowires have been investigated. Growth experiments were performed using Riber Compact 21 setup, which is equipped, in addition to the growth chamber, with a vacuum-aligned chamber for gold deposition (metallization chamber). The morphological properties of the obtained nanostructures were studied by scanning electron microscopy. The optical properties of the nanostructures were investigated by the photoluminescence method. The analyses of morphological properties showed that GaP nanowires with GaAs quantum dots were formed predominantly in the <111> direction, in contrast to AlGaP nanowires with InGaP quantum dots, which in some cases changed the growth direction. The reason for the change in the direction of growth of nanowires may be the participation of indium in the growth process. With a sufficient content of indium in the gold catalyst droplet, such mixed droplet can etch the facets at the top of the nanowires, thereby descending to the side of the nanowires and changing the direction of nanowires growth. The studies of the optical properties of the grown nanostructures showed that the photoluminescence signal from InGaP quantum dots in AlGaP nanowires is observed at a temperature of –263 °C with a peak maximum of around 550 nm. Thus, the synthesized nanostructures are promising for optoelectronic applications, in particular, for creating sources of single-photons.

Keywords: semiconductors, III-V, nanowires, quantum dots, silicon, morphology, photoluminescence

Acknowledgements. The samples were grown under support of Ministry of Science and Higher Education of the Russian Federation, research project No. 2019-1442. Morphological and optical properties measurements were done under support of Russian Foundation for Basic Research (RFBR) (project No 18-02-40006 mega

References

Dubrovskii V.G., Cirlin G.E., Ustinov V.M. Semiconductor nanowhiskers: Synthesis, properties, and applications. Semiconductors, 2009, vol. 43, no. 12, pp. 1539–1584. https://doi.org/10.1134/S106378260912001X
Glas F. Critical dimensions for the plastic relaxation of strained axial heterostructures in free-standing nanowires. Physical Review B, 2006, vol. 74, no. 12, pp. 121302. https://doi.org/10.1103/PhysRevB.74.121302
Chuang L.C., Moewe M., Chase C., Kobayashi N.P., Chang-Hasnain C., Crankshaw S. Critical diameter for III-V nanowires grown on lattice-mismatched substrates. Applied Physics Letters, 2007, vol. 90, no. 4, pp. 043115. https://doi.org/10.1063/1.2436655
Moewe M., Chuang L.C., Dubrovskii V.G., Chang-Hasnain C. Growth mechanisms and crystallographic structure of InP nanowires on lattice-mismatched substrates. Journal of Applied Physics, 2008, vol. 104, no. 4, pp. 044313. https://doi.org/10.1063/1.2968345
Hyun J.K., Zhang S., Lauhon L.J. Nanowire heterostructures. Annual Review of Materials Research, 2013, vol. 43, pp. 451–479. https://doi.org/10.1146/annurev-matsci-071312-121659
Ng K.W., Ko W.S., Tran T-T.D., Chen R., Nazarenko M.V., Lu F., Dubrovskii V.G., Kamp M., Forchel A., Chang-Hasnain C.J. Unconventional growth mechanism for monolithic integration of III–V on silicon. ACS Nano, 2013, vol. 7, no. 1, pp. 100–107. https://doi.org/10.1021/nn3028166
Leandro L., Gunnarsson C.P., Reznik R., Jöns K.D., Shtrom I., Khrebtov A., Kasama T., Zwiller V., Cirlin G., Akopian N. Nanowire quantum dots tuned to atomic resonances. Nano Letters, 2018, vol. 18, no. 11, pp. 7217–7221. https://doi.org/10.1021/acs.nanolett.8b03363
Leandro L., Reznik R., Clement J.D., Repän J., Reynolds M., Ubyivovk E.V., Shtrom I.V., Cirlin G., Akopian N. Wurtzite AlGaAs nanowires. Scientific Reports, 2020, vol. 10, no. 1, pp. 735. https://doi.org/10.1038/s41598-020-57563-0
Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kukushkin S.A., Leandro L., Kasama T., Akopian N. AlGaAs and AlGaAs/GaAs/AlGaAs nanowires grown by molecular beam epitaxy on silicon substrates. Journal of Physics D: Applied Physics, 2017, vol. 50, no. 48, pp. 484003. https://doi.org/10.1088/1361-6463/aa9169
Cirlin G.E., Reznik R.R., Shtrom I.V., Khrebtov A.I., Samsonenko Yu.B., Kukushkin S.A., Kasama T., Akopian N., Leonardo L. Hybrid GaAs/AlGaAs Nanowire-Quantum dot system for single photon sources. Semiconductors, 2018, vol. 52, no. 4, pp. 462–464. https://doi.org/10.1134/S1063782618040103
Cirlin G.E., Shtrom I.V., Reznik R.R., Samsonenko Yu.B., Khrebtov A.I., Bouravleuv A.D., Soshnikov I.P. Hybrid AlGaAs/GaAs/AlGaAs nanowires with a quantum dot grown by molecular beam epitaxy on silicon. Semiconductors, 2016, vol. 50, no. 11, pp. 1421–1424. https://doi.org/10.1134/S1063782616110257
Reznik R.R., Shtrom I.V., Samsonenko Yu.B., Khrebtov A.I., Soshnikov I.P., Cirlin G.E. The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate. Journal of Physics: Conference Series, 2017, vol. 929, no. 1, pp. 012047. https://doi.org/10.1088/1742-6596/929/1/012047
Leandro L., Hastrup J., Reznik R., Cirlin G., Akopian N. Resonant excitation of nanowire quantum dots. npj Quantum Information, 2020, vol. 6, no. 1, pp. 93. https://doi.org/10.1038/s41534-020-00323-9
Reznik R.R., Cirlin G.E., Shtrom I.V., Khrebtov A.I., Soshnikov I.P., Kryzhanovskaya N.V., Moiseev E.I., Zhukov A.E. Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy. Technical Physics Letters, 2018, vol. 44, no. 2, pp. 112–114. https://doi.org/10.1134/S1063785018020116
Cirlin G.E., Reznik R.R., Samsonenko Yu.B., Khrebtov A.I., Kotlyar K.P., Ilkiv I.V., Soshnikov I.P., Kirilenko D.A., Kryzhanovskaya N.V. Phosphorus-based nanowires grown by molecular-beam epitaxy on silicon. Semiconductors, 2018, vol. 52, no. 11, pp. 1416–1419. https://doi.org/10.1134/S1063782618110258
Wang J., Plissard S.R., Verheijen M.A., Feiner L.-F., Cavalli A., Bakkers E.P. Reversible switching of InP nanowire growth direction by catalyst engineering. Nano Letters, 2013, vol. 13, no. 8, pp. 3802–3806. https://doi.org/10.1021/nl401767b

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License