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	A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors</div>

Azzeddine Farti , Abdelkader Touhami

2022 , VOLUME 22, NUMBER 1 ( january-february )

ISSN 2226-1494 (print), ISSN 2500-0373 (online)

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Editor-in-Chief

Nikiforov
Vladimir O.
D.Sc., Prof.

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doi: 10.17586/2226-1494-2022-22-1-147-154

A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors

A. Farti, A. Touhami

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Farti A., Touhami A. A new analytical model of drain current and small signal parameters for AlGaN-GaN high-electron-mobility transistors. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2022, vol. 22, no. 1, pp. 147–154. doi: 10.17586/2226-1494-2022-22-1-147-154

Abstract

The paper proposes a new analytical model of the drain current in AlGaN-GaN high-electron-mobility transistors (HEMT) on the basis of a polynomial expression for the Fermi level as a function of the concentration of charge carriers. The study investigated the influence of parasitic resistances (source and drain sides), high-speed saturation, the amount of aluminum in the AlGaN barrier, and low field mobility. To isolate the output characteristics, cut-off frequency and steepness, the parameters of the hyper frequency signal were developed. Comparison of analytical calculations with experimental measurements confirmed the validity of the proposed model.

Keywords: AlGaN-GaN, HEMTs, 2-DEG two-dimensional electron gas, current–voltage characteristics, cut-off frequencies, Transconductance

Acknowledgements. This work carried out at the Faculty of Sciences Ain Chok Km 8, Hassan II University, Casablanca, Morocco.

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