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	Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling</div>

Elena I. Vasilkova, Evgeny V. Pirogov, Maxim S. Sobolev, Artem I. Baranov, Alexander S. Gudovskikh, Alexei D. Bouravleuv

2022 , VOLUME 22, NUMBER 6 ( november-december )

ISSN 2226-1494 (print), ISSN 2500-0373 (online)

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Nikiforov
Vladimir O.
D.Sc., Prof.

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doi: 10.17586/2226-1494-2022-22-6-1092-1097

Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling

E. I. Vasilkova, E. V. Pirogov, M. S. Sobolev, A. I. Baranov, A. S. Gudovskikh, A. D. Bouravleuv

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Vasilkova E.I., Pirogov E.V., Sobolev M.S., Baranov A.I., Gudovskikh A.S., Bouravleuv A.D. Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2022, vol. 22, no. 6, pp. 1092–1097 (in Russian). doi: 10.17586/2226-1494-2022-22-6-1092-1097

Abstract

Electron density distribution in uniformly doped AlGaAs/GaAs superlattices with respective layer thicknesses 1.5/10 nm and a different number of quantum wells was investigated. Experimental samples containing 3, 5 and 25 periods with the same layer parameters were grown by molecular beam epitaxy. Capacitance-voltage profiling was used to determine the carrier concentration profiles in the structures both numerically and experimentally. During the analysis of experimental capacitance-voltage characteristics it was found that the maximum electron concentration increases with an increase in the number of quantum wells starting from 7,1∙1016 сm–3 for 3 wells up to 9,2∙1016 сm–3 for 25 wells with overall superlattice doping level of 1017 сm–3. In some samples saturation areas are observed on the concentration profiles, that are associated with the region of superlattice. Concentration values, obtained from computer modeling, correspond to the experimental data with an error of less than 10 %. Capacitance-voltage profiling is a suitable technique for determining the carrier concentration profiles in thin barrier superlattices. Despite the fact that the method provides distribution of the “apparent” carrier concentration profile, it can be used to estimate the dopant atoms distribution in the strongly coupled quantum well heterostructures.

Keywords: capacitance-voltage profiling, AlGaAs/GaAs superlattices, molecular beam epitaxy

Acknowledgements. The work was partly supported by the Ministry of Science and Higher Education of the Russian Federation (FSRM- 2020-0008) and the Russian Foundation for Basic Research (RFBR) (19-29-12053).

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