P. V. Bulat, A. A. Lebedev, Y. N. Makarov

Read the full article  ';
Article in Russian


The paper deals with creation of heteropolytypes instrument structures on silicon carbide for power devices not subjected to degradation of electrical properties. The phenomenon of polytypism is considered. Characteristics of different SiC polytypes are given. Information is cited about the causes and effects for degradation of p-n -structures of power devices based on SiC at large density direct current passing. It is shown that hetero-transitions between SiC polytypes may have more structural perfection than hetero-transitions between semiconductors with different chemical nature. Conclusion is made about application prospects for heterostructures based on 3C-SiC polytype in devices of modern power electronics. A brief overview of the possible methods for 3C-SiC single crystals growth is done. A basic scheme for creation of heteropolytype 3C-SiC structures based on substrates of 6H-SiC polytype is suggested.

Keywords: silicon carbide, polytype, polytypeness, sublimation epitaxy, heteropolytype structures, 3C-SiC

1.          Cooper J.A., Melloch M.R., Woodall J.M., Spitz J., Schoen K.J., Henning J.P. Recent advances in SiC power devices. Materials Science Forum, 1998, vol. 264–268, part 2, pp. 895–900.
2.          Ziegler G., Theis D. New degradation phenomena in blue light emitting silicon carbide diodes. IEEE Transactions on Electron Devices, 1981, vol. ED-28, no. 4, pp. 425–427.
3.          Bergman J.P., Lendenmann H., Nilsson P.A., Lindefelt U., Skytt P. Crystal defects as source of anomalous forward voltage increase of 4H-SiC diodes. Materials Science Forum, 2001, vol. 353–356, pp. 299–302.
4.          Miao M.S., Limpijumnong S., Lambrecht W.R.L. Stacking fault band structure in 4H-SiC and its impact on electronic devices. Applied Physics Letters, 2001, vol. 79, no. 26, pp. 4360–4362. doi: 10.1063/1.1427749
5.          Baumhauer H. Uber die krystalledes carborundums. Z. Kristallogr, 1912, vol. 50, pp. 33–38.
6.          Baumhauer H. Über die modificationendes carborundums und die erscheinung der polytypie. Z. Kristallogr, 1915, vol. 55, pp. 249–254.
7.          Schneer C.J., Polytypism in one dimension. Acta Crystallogr., 1955, vol. 8, no. 5, pp. 279–284.
8.          Verma A.R., Krishna P. Polymorphism and Polytypism in Crystals. NY: Wiley, 1966, 274 p.
9.          Ramsdell L.S. Studies on silicon carbide. Am. Mineral, 1947, vol. 32, pp. 64–71.
10.       Levinshtein M.E., Rumyantsev S.L., Shur M.S. Properties of Advanced Semiconductor Materials: GaN, AlN,InN, BN, SiC, SiGe. John Wiley and Sons, 2001, 194 p.
11.       Fissel A., Schroter B., Kaiser U., Richter W. Advances in the molecular-beam epitaxial growth of artificially layered heteropolytypic structures of SiC. Applied Physics Letters, 2000, vol. 77, no. 15, pp. 2418–2420.
12.       Takagi H., Nishiguchi T., Ohta S., Furusho T., Ohshima S., Nishino S. Crystal growth of 6H-SiC (01-14) on 3C-SiC (001) substrate by sublimation epitaxy. Materials Science Forum, 2004, vol. 457–460, no. 1, pp. 289–292.
13.       Lebedev A.A., Zelenin V.V., Abramov P.L., Bogdanova E.V., Lebedev S.P., Nel'son D.K., Razbirin B.S., Shcheglov M.P., Tregubova A.S., Suvajarvi M., Yakimova R. A study of thick 3C-SiC epitaxial layers grown on 6H-SiC substrates by sublimation epitaxy in vacuum. Semiconductors, 2007, vol. 41, pp. 263–265. doi: 10.1134/S1063782607030037
14.       Vodakov Yu.A., Lomakina G.A., Mokhov E.N. Non-stoichiometry and polytypism of silicon carbide. Sov. Phys. Solid State, 1982, vol. 24, p.780.
15.       Vakhner Yu., Tairov Yu.M. About SiC (Sc) polytypism, grown from melt. Sov. Phys. Solid State, 1970, vol. 12, p. 1213.
16.       Vodakov Yu.A., Mokhov E.N., Roenkov A.D., Anikin M.M. Impurity effects on silicon carbide polytypism. Sov. Tech. Phys. Lett., 1979, vol. 5, p. 147.
17.       Lebedev A.A., Strel'chuk A.M., Davydov D.V., Savkina N.S., Tregubova A.S., Kuznetsov A.N., Solov'ev V.A., Poletaev N.K. 3C-SiC p–n structures grown by sublimation on 6H-SiC substrates. Semiconductors, 2003, vol. 37, no. 4, pp. 482–484. doi: 10.1134/1.1568473
18.       Savkina N., Tregubova A., Scheglov M., Soloviev V., Volkova A., Lebedev A. Characterization of 3C-SiC epilayers grown on 6H-SiC substrates by vacuum sublimation. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 2002, vol. 91–92, pp.  317-320. doi: 10.1016/S0921-5107(01)01053-4
19.       Savkina N.S., Strel'chuk A.M., Sorokin L.M., Mosina G.N., Tregubova A.S., Solov'ev V.V., Lebedev A.A. Characterization of 3C-SiC/6H-SiC heterostructures grown by vacuum sublimation. Materials Science Forum, 2003, vol. 433–436, pp. 293–296.

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License
Copyright 2001-2024 ©
Scientific and Technical Journal
of Information Technologies, Mechanics and Optics.
All rights reserved.