Sitnikov Sergey V.

Work place: Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Post: Scientific Researcher
Degree: PhD
E-mail: sitnikov@ isp.nsc.ru
Scopus ID: 351842335100З
ORCID: 0000-0002-2398-8272
Vorontsova I. A., Sitnikov S. V.
Drift of two-dimensional vacancy islands on the Si(100) surface under electromigration conditions

The article was published in issue 5, volume 21, 2021
Razzhivina M. E., Rodyakina E. E., Sitnikov S. V.
Kinetics of transformation of the atomic step bunches shape under electromigration conditions on the Si(001) surface

The article was published in issue 5, volume 21, 2021
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