Rogilo Dmitry I.

Work place: Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Post: Scientific Researcher
Degree: PhD
Scopus ID: 35115461100
ORCID: 0000-0002-7586-0107
Soloveva E. O., Rogilo D. I., Sheglov D. V., Latyshev A. V.
Abnormal diffusion profile of adatoms on extremely wide terraces of the Si(111) surface

The article was published in issue 5, volume 21, 2021
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