Sheglov Dmitry V.

Work place: Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Post: Senior Researcher
Degree: PhD
Scopus ID: 6603381702
ORCID: 0000-0002-5220-8781
Soloveva E. O., Rogilo D. I., Sheglov D. V., Latyshev A. V.
Abnormal diffusion profile of adatoms on extremely wide terraces of the Si(111) surface

The article was published in issue 5, volume 21, 2021
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