Latyshev Alexander V.

Work place: Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Post: Director
Degree: D.Sc.
Scopus ID: 7005151705
ORCID: 0000- 0002-4016-593X
Soloveva E. O., Rogilo D. I., Sheglov D. V., Latyshev A. V.
Abnormal diffusion profile of adatoms on extremely wide terraces of the Si(111) surface

The article was published in issue 5, volume 21, 2021
Copyright 2001-2024 ©
Scientific and Technical Journal
of Information Technologies, Mechanics and Optics.
All rights reserved.