Author Romanov Alexey E Journal Scientific and Technical Of Information Technologies, Mechanics and Optics

2025 , VOLUME 25, NUMBER 1 ( january-february )

ISSN 2226-1494 (print), ISSN 2500-0373 (online)

Publications

2025

Editor-in-Chief

Nikiforov
Vladimir O.
D.Sc., Prof.

Partners

Romanov Alexey E

Work place: ITMO University, Saint Petersburg, 197101, Russian Federation; Ioffe Institute, Saint Petersburg, 194021, Russian Federation,
Post: Chief Researcher; Head of Sector
Degree: D.Sc.
E-mail: Alexey.romanov@niuitmo.ru
Scopus ID: 7202768874
ORCID: 0000-0003-3738-408X

Aseev V. A., Bibik A. Y., Kolobkova E. V., Nekrasova Y. A., Nikonorov N. V., Romanov A. E., Tuzova J. V., Shvaleva M. A. INORGANIC PHOSPHORS IN GLASS BASED ON LEAD SILICATE GLASSES
The article was published in issue 5, volume 14, 2014

Guzilova L. I., Maslov V. N., Aifantis K. E., Romanov A. E., Nikolaev V. I. DETERMINATION OF VICKERS MICROHARDNESS IN β-Ga₂O₃ SINGLE CRYSTALS GROWN FROM THEIR OWN MELT
The article was published in issue 3, volume 15, 2015

Fudin M. S., Munbaev K. D., Lipsanen H. K., Aifantis K. E., Bougrov V. E., Romanov A. E. FREQUENCY CHARACTERISTICS OF MODERN LED PHOSPHOR MATERIALS
The article was published in issue 6, volume 14, 2014

Mynbaeva M. G., Kirilenko D. A., Sitnikova A. A., Kremleva A. V., Nikolaev V. I., Munbaev K. D., Odnoblyudov M. A., Lipsanen H. K., Bougrov V. E., Romanov A. E. SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE
The article was published in issue 6, volume 16, 2016

Bauman D. A., Панов Д. Ю., Spiridonov V. A., Kremleva A. V., Odnoblyudov M. A., Asach A. V., Krylov V. A., Isachenko G. N., Tambulatova E. V., Bougrov V. E., Romanov A. E.

Measurements of heat capacity and thermal conductivity of β-Ga₂O₃ and β-(Al_xGa_1–x)₂O₃ bulk crystals grown by the Czochralski method

The article was published in issue 6, volume 21, 2021

Ivanov A. Y., Sharofidinov S. S., Panov D. I., Kremleva A. V., Bauman D. A., Romanov A. E.

Forming a thick layer of ε-Ga₂O₃ on the GaN sublayer with V-defects at the interface

The article was published in issue 6, volume 24, 2024