Sharofidinov Shukrillo Sh.

Work place: Ioffe Institute, Saint Petersburg, 194021, Russian Federation
Post: Senior Researcher
Degree: PhD (Physics & Mathematics)
E-mail: shukrillo71@mail.ru
Scopus ID: 9739001900
ORCID: 0000-0003-0354-5981
Ivanov A. Y., Sharofidinov S. S., Panov D. I., Kremleva A. V., Bauman D. A., Romanov A. E.
Forming a thick layer of ε-Ga2O3 on the GaN sublayer with V-defects at the interface

The article was published in issue 6, volume 24, 2024
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