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Editor-in-Chief
Nikiforov
Vladimir O.
D.Sc., Prof.
Partners
GaAs P-I-N STRUCTURES FOR X-RAY DETECTORS
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Abstract
The characteristics of GaAs p-i-n structures, made by vapor phase epitaxy, were researched. New conditions of epitaxial growth, allowing the production of thick ultra-pure GaAs layers by single process are worked out.
Keywords:
p-i-n structures, GaAs, HVPE, X-ray detector