GaAs P-I-N STRUCTURES FOR X-RAY DETECTORS
Read the full article ';
The characteristics of GaAs p-i-n structures, made by vapor phase epitaxy, were researched. New conditions of epitaxial growth, allowing the production of thick ultra-pure GaAs layers by single process are worked out.
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License