GaAs P-I-N STRUCTURES FOR X-RAY DETECTORS

Y. Zhilyaev, D. Mikulik, T. Orlova, N. Poletaev, S. Snytkina, L. Fyodorov, V. Panteleev


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Abstract

The characteristics of GaAs p-i-n structures, made by vapor phase epitaxy, were researched. New conditions of epitaxial growth, allowing the production of thick ultra-pure GaAs layers by single process are worked out.


Keywords: p-i-n structures, GaAs, HVPE, X-ray detector

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