INVESTIGATION OF LANTHANUM GALLATES BY X-RAY DIFFRACTION ANALYSIS

2010 , VOLUME 10, NUMBER 4 ( JULY-AUGUST )

ISSN 2226-1494 (print), ISSN 2500-0373 (online)

Publications

Editor-in-Chief

Nikiforov
Vladimir O.
D.Sc., Prof.

Partners

O. Pshenko, L. Pyankova

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Abstract

The work deals with the study of phase composition of poorly-type semiconductors - Lanthanum Gallates

Perovskite (LaGaO3) doped with a touch of Co³⁺ (up to 10%) by X-ray diffraction analysis. Comparative analysis

of X-ray pictures shows that cobalt impurity concentration growth in the mixed crystals LaGaСохO3 leads to

insufficient deformation of cubic crystal lattice with the decrease of elementary cell parameter by 0, 03 nm.

Nevertheless, in Lanthanum gallates the local symmetry decrease is possible and it becomes apparent on X-ray

pictures as diffraction maximum splitting.

Keywords: Lanthanum gallates, X-ray analysis, doped semiconductors, perovskite structures, qualitative analysis of semiconductors