Munbaev Karim Djafarovich

Work place: Ioffe Institute, Saint Petersburg, 194021, Russian Federation
Post: Head of Laboratory
Degree: D.Sc
E-mail: mynkad@mail.ioffe.ru
Podosinnikov A. I., Romanova G. E., Sheglov S. A., Peretyagin V. S., Munbaev K. D., Lipsanen H. K., Bougrov V. E. EDGE EFFECT MODELING AND STUDY FOR THREE-CHIP RGB LIGHT-EMITTING DIODES
The article was published in issue 2, volume 15, 2015
Zhumashev N. K., Munbaev K. D., Bazhenov N. L., Stoyanov N. D., Kizhaev S. S., Gurina T. I., Astakhova A. P., Tchernyaev A. V., Molchanov S. S., Lipsanen H. K., Salikhov K. M., Bougrov V. E. SPECTRAL CHARACTERISTICS OF MID-INFRARED LIGHT-EMITTING DIODES BASED ON InAs (Sb,P)
The article was published in issue 1, volume 16, 2016
Fudin M. S., Munbaev K. D., Lipsanen H. K., Aifantis K. E., Bougrov V. E., Romanov A. E. FREQUENCY CHARACTERISTICS OF MODERN LED PHOSPHOR MATERIALS
The article was published in issue 6, volume 14, 2014
Mynbaeva M. G., Kirilenko D. A., Sitnikova A. A., Kremleva A. V., Nikolaev V. I., Munbaev K. D., Odnoblyudov M. A., Lipsanen H. K., Bougrov V. E., Romanov A. E. SYNTHESIS OF THICK GALLIUM NITRIDE LAYERS BY METHOD OF MULTI-STAGE GROWTH ON SUBSTRATES WITH COLUMN STRUCTURE
The article was published in issue 6, volume 16, 2016
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