Vorontsova Iuliia A.

Work place: Rzhanov Institute of Semiconductor Physics Siberian Branch of Russian Academy of Sciences, Novosibirsk, 630090, Russian Federation
Post: Laboratory Assistant
E-mail: jvorontsova2000@gmail.com
ORCID: 0000-0002-4821-7773
Vorontsova I. A., Sitnikov S. V.
Drift of two-dimensional vacancy islands on the Si(100) surface under electromigration conditions

The article was published in issue 5, volume 21, 2021
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