DETERMINATION OF VICKERS MICROHARDNESS IN β-Ga2O3 SINGLE CRYSTALS GROWN FROM THEIR OWN MELT
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For citation: Guzilova L.I., Maslov V.N., Aifantis K.E., Romanov A.E., Nikolaev V.I. Determination of Vickers microhardness in β-Ga2O3 single crystals grown from their own melt. Scientific and Technical Journal of Information Technologies, Mechanics and Optics, 2015, vol.15, no. 3, pp. 546–549.
The results of microhardness measurements of β-Ga2O3 single crystals for (001) crystallographic face are reported. The crystals were grown by the free crystallization with the "Garnet-2M" equipment. Microhardness values were determined by the Vickers method at varying loads. A four-sided diamond pyramid was used as an indenter. The average value of gallium oxide microhardness was equal to 8.91 GPa. We have carried out comparison of the values obtained with the microhardness for the other wide bandgap semiconductors - epitaxial GaN layers grown on 6H-SiC and GaP layers grown on GaP:S. The findings are usable for machining process development of β-Ga2O3 single crystal substrates. In particular, silicon carbide and electrocorundum may be recommended for β-Ga2O3 machine processing.
Acknowledgements. This work has been supported by the Russian Scientific Foundation (Grant RSF № 14-29-00086).
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