POROUS SILICON THIN FILM EFFECT ON SPECTRAL CHARACTERISTIC OF SILICON PHOTODIODE
Read the full article ';
Effect of porous silicon thin film formed by anode electrochemical etching of p-type area on spectral characteristic of silicon photodiode has been examined. It is shown that generated porous silicon layer results in significant increase of spectral sensitivity in the whole spectrum. Time modification of photodiode spectral sensitivity has been observed.
This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License